SiC fibre by chemical vapour deposition on tungsten filament
نویسندگان
چکیده
منابع مشابه
Chemical Vapour Deposition for Optical Fibre Technology
At the beginning of the seventies, a break-through took place in the telecommunication research. The introduction of Chemical Vapour Deposition technology in the manufacture of optical fibres allowed both technical quality and economical convenience to realise optical networks, thus beginning the telecommunication revolution. Since that moment, a great development of the CVD techniques has been...
متن کاملChemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates
a Epitaxial growth of rhombohedral boron nitride (r-BN) on different polytypes of silicon carbide (SiC) is demonstrated using thermally activated hot-wall chemical vapour deposition and triethyl boron and ammonia as precursors. With respect to the crystalline quality of the r-BN films, we investigate the influence of the deposition temperature, the precursor ratio (N/B) and the addition of a mi...
متن کاملGraphene epitaxy by chemical vapor deposition on SiC.
We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) an...
متن کاملSynthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
متن کاملGold catalytic Growth of Germanium Nanowires by chemical vapour deposition method
Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal s...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Bulletin of Materials Science
سال: 2001
ISSN: 0250-4707,0973-7669
DOI: 10.1007/bf02704921